Impact of defect density in Si bulk multicrystals on gettering effect of impurities

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8790-8792

  Takahashi, Isao ^a   Usami, Noritaka ^a   Yokoyama, Ryusuke ^a   Nose, Yoshitaro ^a   Kutuskake, Kentaro ^a   Fujiwara, Kozo ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Crystal growth; Defect; Gettering; Grain boundary; Impurity; Multicrystal; Solar cell

Indexed keywords

CELL GROWTH; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DEFECTS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); IMPURITIES; PHOTOVOLTAIC CELLS; SILICON; SOLAR CELLS; SOLAR EQUIPMENT;

DEFECT; GETTERING; GRAIN BOUNDARY; IMPURITY; MULTICRYSTAL; SOLAR CELL;

DEFECT DENSITY;

EID: 59349115784     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8790     Document Type: Article

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