Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 236-239

  Arafune, K ^a   Sasaki, T ^a   Wakabayashi, F ^a   Terada, Y ^b   Ohshita, Y ^a   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Defects; Impurities; Polycrystalline silicon; Solar cells

Indexed keywords

ABSORPTION; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DEFECTS; LUMINESCENCE; POLYCRYSTALLINE MATERIALS; SILICON; SOLUBILITY; SUBSTRATES; X RAYS;

ETCH-PIT DENSITY; MINORITY CARRIER LIFETIME; RECOMBINATION ACTIVITY; X-RAY MICROPROBE FLUORESCENCE MEASUREMENTS;

SOLAR CELLS;

EID: 33645155795     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.062     Document Type: Conference Paper

References (4)

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2. S. Nara, Y. Sakaguchi, In: Proceedings of the third World Conference on Photovoltaic Energy Conversion, 2003, p. 1483.
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