Study on thermal stress in a silicon ingot during a unidirectional solidification process

Journal of Crystal Growth

Volumn 310, Issue 19, 2008, Pages 4330-4335

  Chen, X J ^a   Nakano, S ^a   Liu, L J ^a,b   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

02.60.Cb; 61.50.Ah; 81.10. h; 81.40.Jj; A1. Computer simulation; A1. Heat transfer; A1. Solidification; A1. Stresses

Indexed keywords

INGOTS; SILICON; SOLIDIFICATION; STRENGTH OF MATERIALS; STRESS CONCENTRATION; THERMAL STRESS;

02.60.CB; 61.50.AH; 81.10.-H; 81.40.JJ; A1. COMPUTER SIMULATION; A1. HEAT TRANSFER; A1. SOLIDIFICATION; A1. STRESSES;

THERMOELASTICITY;

EID: 51649100975     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.027     Document Type: Article

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