Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Physica B: Condensed Matter

Volumn 364, Issue 1-4, 2005, Pages 162-169

  Chen, Jun ^a   Yang, Deren ^a   Xi, Zhenqiang ^a   Sekiguchi, Takashi ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

EBIC; Grain boundary; Hydrogen passivation; Silicon

Indexed keywords

CONTAMINATION; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRON BEAMS; FILM GROWTH; GRAIN BOUNDARIES; HYDROGEN; IRON; SILICON;

ELECTRON-BEAM-INDUCED CURRENT (EBIC); HYDROGEN PASSIVATION; IMPURITY CONTAMINATION; MULTICRYSTALLINE SILICON (MC-SI);

PASSIVATION;

EID: 20344376398     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.04.008     Document Type: Article

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