Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1572-1576

  Gao, B ^a   Chen, X J ^a   Nakano, S ^a   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Directional solidification; A1. Impurities; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

A1. DIRECTIONAL SOLIDIFICATION; A1. IMPURITIES; B3. SOLAR CELLS; B3.SOLAR CELL; DIRECTIONAL SOLIDIFICATION;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL IMPURITIES; CRYSTALLIZATION; FURNACES; GRAIN BOUNDARIES; OXYGEN; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; SOLAR FURNACES; SOLIDIFICATION;

SEMICONDUCTING SILICON;

EID: 77949912393     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.034     Document Type: Article

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