Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Ohshita, Y ^a   Nishikawa, Y ^a   Tachibana, M ^a   Tuong, V K ^a   Sasaki, T ^a   Kojima, N ^a   Tanaka, S ^b   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

A1. Cast; A1. Segregation; A2. Growth from melt; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SILICON WAFERS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; ELECTRON BEAM-INDUCED CURRENT (EBIC); ETCH-PIT DENSITY; MELTING POINTS;

SILICON;

EID: 15844428368     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.111     Document Type: Conference Paper

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