Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 24-28, 2006, Pages

  Sugimoto, Hiroki ^a   Inoue, Masaaki ^a,b   Tajima, Michio ^a   Ogura, Atsushi ^b   Ohshita, Yoshio ^c  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

D lines; Defects; Dislocations; Intra grain; Mapping; Multicrystalline Si; Photoluminescence; PL

Indexed keywords

DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; MAPPING; PHOTOLUMINESCENCE; SILICON; SPECTROSCOPIC ANALYSIS;

D-LINES; INTRA-GRAIN; MULTICRYSTALLINE SI;

CRYSTAL DEFECTS;

EID: 33746285506     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L641     Document Type: Article

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