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Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 49-54

Investigations on the behaviour of carbon during inductive melting of multicrystalline silicon

(6) Raabe, L a Ehrig, J a Wurzner S a Patzold O a Stelter, M a Moller H J a

a TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

Bridgman growth; Carbon concentration; Multicrystalline silicon

Indexed keywords

CONCENTRATION (PROCESS); DEFECTS; GRAIN BOUNDARIES; PHASE DIAGRAMS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; VACUUM FURNACES; CARBON; WIDE BAND GAP SEMICONDUCTORS;

BRIDGMAN; BRIDGMAN GROWTH; CARBON CONCENTRATIONS; CO CONCENTRATIONS; CO-FREE; GASPHASE; HIGH VACUUM; INDUCTIVE MELTING; MULTI-CRYSTALLINE SILICON; THERMODYNAMIC CALCULATIONS; TOP SURFACE; CALCULATED PHASE DIAGRAMS; INDUCTION FURNACE;

SEMICONDUCTOR GROWTH; SILICON COMPOUNDS;

EID: 84954213439 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.156-158.49 Document Type: Conference Paper

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.