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Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

Analysis of charge loss in nonvolatile memory with multi-layered SiC nanocrystals

(5) Lee, Dong Uk a Lee, Tae Hee a Kim, Eun Kyu a Shin, Jin Wook b Cho, Won Ju b

a Hanyang University (South Korea)

b Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; CHARGE LOSS; CHARGE TRAP; DATA STORAGE; DEGRADATION EFFECT; ELECTRICAL PROPERTY; MEMORY WINDOW; MULTI-LAYERED; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OXIDE LAYER; PROGRAM AND ERASE; QUANTUM DOT; STRESS-INDUCED LEAKAGE CURRENT; TUNNEL OXIDE];

ACTIVATION ENERGY; ELECTRIC PROPERTIES; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; WIND TUNNELS; WINDOWS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69049102120 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3205112 Document Type: Article

Times cited : (19)

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