Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Mikhelashvili, V ^a   Meyler, B ^a   Yofis, S ^a   Shneider, Y ^a   Zeidler, A ^a   Garbrecht, M ^a   Cohen Hyams, T ^a   Kaplan, W D ^a   Lisiansky, M ^b   Roizin, Y ^b   Salzman, J ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TowerJazz   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCRYSTALS; BLOCKING LAYERS; CHARGE STORAGE; DRAIN LEAKAGE CURRENT; DYNAMIC PROGRAMS; EFFECTIVE OXIDE THICKNESS; GATE DIELECTRIC STACKS; LOW VOLTAGES; LOW-VOLTAGE; MEMORY TRANSISTORS; MEMORY WINDOW; NON-VOLATILE; NON-VOLATILE MEMORIES; PULSE DURATIONS; PULSE WIDTH;

GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOCRYSTALS; SILICON COMPOUNDS;

HAFNIUM OXIDES;

EID: 79959399774     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3595484     Document Type: Article

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