New extrapolation law for data-retention time-to-failure of nonvolatile memories

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 197-199

  De Salvo, B ^a,b   Ghibaudo, G ^a   Pananakakis, G ^a   Guillaumot, B ^c   Candelier, P ^b,c   Reimbold, G ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PROM; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

DATA RETENTION TIME TO FAILURE; DRY THERMAL GATE OXIDE; EXTRAPOLATION LAW;

NONVOLATILE STORAGE;

EID: 0032649561     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761013     Document Type: Article

References (10)

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9. B. DeSalvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, and P. Candelier, "Experiment and modeling of data-retention in NVM's," in Proc. IEEE NVSMW, Monterey, CA, 1998, p. 76.
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