An interactive simulation tool for complex multilayer dielectric devices

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 2, 2011, Pages 236-243

  Southwick, Richard G ^a,b   Sup, Aaron ^a   Jain, Amit ^c   Knowlton, William B ^a  

^a BOISE STATE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Boise State University   (United States)

Author keywords

Energy band; high dielectric; metaloxidesemiconductor (MOS) devices; simulation

Indexed keywords

DEVICE PARAMETERS; DEVICE PERFORMANCE; DEVICE STRUCTURES; DIELECTRIC LAYER; EFFECTIVE OXIDE THICKNESS; ENERGY BAND; ENERGY-BAND DIAGRAM; FINITE-ELEMENT; FIXED CHARGES; FLAT-BAND VOLTAGE; INTERACTIVE SIMULATIONS; LAYER PARAMETERS; MATHEMATICAL PROGRAM; METALOXIDESEMICONDUCTOR (MOS) DEVICES; MULTILAYER DIELECTRIC DEVICES; MULTIPLE LAYERS; NON-VOLATILE MEMORIES; NOVEL DEVICES; POISSON-SCHRODINGER EQUATION; SIMULATION; SIMULATION TOOL; TIME SPENT; TUNNELING DISTANCE;

BAND STRUCTURE; CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; TOOLS;

MOS DEVICES;

EID: 79959527537     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2011.2129593     Document Type: Article

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