Electrical characteristics of WSi2 nanocrystal capacitors with barrier-engineered high-k tunnel layers

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Lee, Hyo Jun ^a   Lee, Dong Uk ^a   Kim, Eun Kyu ^a   You, Hee Wook ^a,b   Cho, Won Ju ^a,b  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL GATES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; GATE CAPACITORS; MEMORY WINDOW; TUNNEL BARRIER;

CAPACITORS; HAFNIUM OXIDES; NANOCRYSTALS; SILICON COMPOUNDS;

ELECTRIC PROPERTIES;

EID: 79959448112     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GF13     Document Type: Article

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