Field enhancement effect of nanocrystals in bandgap engineering of tunnel oxide for nonvolatile memory application

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Lo, Yun Shan ^a   Liu, Ke Chih ^a   Cheng, Cheng Wei ^b   Wu, Jyun Yi ^a   Hou, Cheng Hao ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; HAFNIUM COMPOUNDS; OZONE WATER TREATMENT; SEMICONDUCTING SILICON COMPOUNDS; TUNNELS;

AU NANOCRYSTALS; BAND-GAP ENGINEERINGS; CHARGE RETENTIONS; CHARGE STORAGE CHARACTERISTICS; DIFFERENT THICKNESS; FIELD ENHANCEMENT EFFECTS; INJECTION EFFICIENCIES; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; NON-VOLATILE MEMORY APPLICATIONS; SI SUBSTRATES; TUNNEL OXIDE];

NANOCRYSTALS;

EID: 61349195722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077614     Document Type: Article

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