Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Lee, Dong Uk ^d   Lee, Min Seung ^d   Kim, Jae Hoon ^d   Kim, Eun Kyu ^a   Koo, Hyun Mo ^b   Cho, Won Ju ^b   Kim, Won Mok ^c  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC INSULATING MATERIALS; GOLD; NANOPARTICLES; SILICA; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; THRESHOLD VOLTAGE;

CHARGING EFFECTS; DIGITAL SPUTTERING; FLOATING GATE MEMORY DEVICES; NONVOLATILE MEMORY DEVICES;

NONVOLATILE STORAGE;

EID: 33847661428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711772     Document Type: Article

References (17)

1. U. Ganguly, E. C. Kan, and Y. Zhang, Appl. Phys. Lett. 87, 043108 (2005).
2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
3. E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, and J. van den Berg, Appl. Phys. Lett. 77, 3450 (2000).
4. Y. Kim, K. H. Park, T. H. Chung, H. J. Bark, J.-Y. Yi, W. C. Choi, E. K. Kim, J. W. Lee, and J. Y. Lee, Appl. Phys. Lett. 78, 934 (2001).
5. T. Feng, H. Yu, M. Dicken, J. R. Heath, and H. A. Atwater, Appl. Phys. Lett. 86, 033103 (2005).
6. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49, 1606 (2002).
7. H. Iwai and S. Ohmi, Microelectron. Reliab. 42, 465 (2002).
8. N. Konofaos, Microelectron. J. 35, 421 (2004).
9. C.-H. Tu, T.-C. Chang, P.-T. Liu, H.-C. Liu, C.-C. Tsai, L.-T. Chang, T.-Y. Tseng, S. M. Sze, and C.-Y. Chang, Appl. Phys. Lett. 89, 052112 (2006).
10. C.-H. Tu, T.-C. Chang, P.-T. Liu, H. C. Liu, S. M. Sze, and C.-Y. Chang, Appl. Phys. Lett. 89, 162105 (2006).
11. B. Garrido, S. Cheylan, O. Gonzalez-Varona, A. Perez-Rodriguez, and J. R. Morante, Appl. Phys. Lett. 82, 4818 (2003).
12. J.-Y. Tseng, C.-W. Cheng, S.-Y. Wang, T.-B. Wu, K.-Y. Hsieh, and R. Liu, Appl. Phys. Lett. 85, 2595 (2004).
13. A. Chandra and B. M. Clemens, Appl. Phys. Lett. 87, 253113 (2005).
14. Z. Tan, S. K. Samanta, W. J. Yoo, and S. Lee, Appl. Phys. Lett. 86, 013107 (2005).
15. C.-C. Wang, J.-Y. Tseng, T.-B. Wu, L.-J. Wu, C.-S. Liang, and J.-M. Wu, J. Appl. Phys. 99, 026102 (2006).
16. W.-J. Cho, C.-G. Ahn, K. Im, J.-H. Yang, J. Oh, I.-B. Baek, and S. Lee, IEEE Electron Device Lett. 25, 366 (2004).
17. M. S. Lee, J. H. Kim, E. K. Kim, and W. M. Kim, J. Korean Phys. Soc. 48, 1552 (2006).