Charge loss in WSi2 nanocrystals nonvolatile memory with SiO2/Si3N4/SiO2 tunnel layer

Current Applied Physics

Volumn 11, Issue 2 SUPPL., 2011, Pages

  Lee, Dong Uk ^a   Lee, Hyo Jun ^a   Kim, Eun Kyu ^a   You, Hee Wook ^b   Cho, Won Ju ^b  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Nanocrystal; Non volatile memory; Quantum dots; WSi2

Indexed keywords

BREAK DOWN; CHARGE LOSS; LAYER STABILITY; MEMORY WINDOW; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OXIDE LAYER; OXIDE NITRIDE OXIDES; TUNNEL OXIDES; WSI2;

ACTIVATION ENERGY; NANOCRYSTALS; NITRIDES; NONVOLATILE STORAGE; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 79960902724     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.12.036     Document Type: Article

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