SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 86, Issue 7, 2012, Pages 990-993

Properties of CeO x/La 2O 3 gate dielectric and its effects on the MOS transistor characteristics

(5) Wong, H a Yang, B L a Kakushima, K b Ahmet, P b Iwai, H b

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Cerium oxide; Lanthanum oxide; MOS transistor; Subthreshold slope

Indexed keywords

CERIUM OXIDES; DIELECTRIC DEFECTS; EFFECTIVE GATE LENGTH; ELECTRICAL CHARACTERISTIC; METAL ELECTRODES; METAL OXIDE SEMICONDUCTOR; MOS TRANSISTOR; N-CHANNEL; OXYGEN ATOM; STACKED GATE; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SLOPE;

CERIUM; CERIUM COMPOUNDS; DIELECTRIC FILMS; GATE DIELECTRICS; LANTHANUM OXIDES; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

TRANSISTORS;

EID: 84857232519 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2011.09.010 Document Type: Conference Paper

Times cited : (11)

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