Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 618-621

  Hsu, Chia Wei ^a   Fang, Yean Kuen ^a   Yeh, Wen Kuan ^b   Chen, Chun Yu ^a   Chiang, Yen Ting ^a   Juang, Feng Renn ^a   Lin, Chien Ting ^c   Lai, Chien Ming ^c  

^a Institute of Microelectronics   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; DRIVE CURRENTS; EFFECTIVE OXIDE THICKNESS; ELECTRICAL CHARACTERISTIC; GATE DEVICES; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; IN-SITU; INTERFACE TRAPS; NEGATIVE BIAS INSTABILITIES; OXYGEN EFFECT; POSITIVE BIAS; POST DEPOSITION ANNEALING;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; RELIABILITY;

OXYGEN;

EID: 77953137162     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.045     Document Type: Article

References (12)

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