Selection of rare earth silicates for highly scaled gate dielectrics

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1868-1871

  Kakushima, K ^a   Okamoto, K ^a   Koyanagi, T ^a   Kouda, M ^a   Tachi, K ^a   Kawanago, T ^a   Song, J ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

EOT; HX PES; Interfacial state density; Mobility; Rare earth oxides; Silicate

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HIGH-K DIELECTRIC; INTERFACE STATES; PRASEODYMIUM; RARE EARTHS; SILICATES; THRESHOLD VOLTAGE;

EFFECTIVE ELECTRON MOBILITY; EQUIVALENT OXIDE THICKNESS; HIGH DIELECTRIC CONSTANTS; HIGH- K GATE DIELECTRICS; INTERFACE STATE DENSITY; INTERFACIAL PROPERTY; INTERFACIAL STATE DENSITY; RARE EARTH OXIDE;

GATE DIELECTRICS;

EID: 79960922978     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.001     Document Type: Article

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