Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 206-209

  Ng, J A ^a   Kuroki, Y ^a   Sugii, N ^a   Kakushima, K ^a   Ohmi, S I ^a   Tsutsui, K ^a   Hattori, T ^a   Iwai, H ^a   Wong, H ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Gate Dielectric; High k; La2O3; MOSFET; Post Deposition Annealing; Post Metallization Annealing

Indexed keywords

ANNEALING; DEPOSITION; DIELECTRIC FILMS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON MOBILITY; LANTHANUM COMPOUNDS; LOW TEMPERATURE EFFECTS; METALLIZING; MOSFET DEVICES;

GATE DIELECTRIC; HIGH-K; LA2O3; POST-DEPOSITION ANNEALING; POST-METALLIZATION ANNEALING;

ULTRATHIN FILMS;

EID: 19944413995     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.019     Document Type: Conference Paper

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