Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 12, 2006, Pages 9197-9199

  Kawada, Nobuhito ^a   Ito, Masahiko ^a   Saito, Yoji ^a  

^a SEIKEI UNIVERSITY   (Japan)

Author keywords

AES; Dielectrics; High k; Lanthanum; Oxynitride; XPS

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAMS; LANTHANUM COMPOUNDS; NITROGEN COMPOUNDS; SILICON COMPOUNDS; THERMAL EVAPORATION; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM EVAPORATION; NITROGEN RADICALS; SILICON SUBSTRATES; SUBSTRATE TEMPERATURE; THERMAL ANNEALING;

ULTRATHIN FILMS;

EID: 34248652811     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.9197     Document Type: Article

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