Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 475-480

  Sen, Banani ^a   Wong, Hei ^a   Molina, J ^b   Iwai, H ^b   Ng, J A ^b   Kakushima, K ^b   Sarkar, C K ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JADAVPUR UNIVERSITY   (India)

Author keywords

High dielectric; La2O3; Rare earth oxide; Trapping characteristics

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CHARGE TRAPPING; GATE DIELECTRICS; LANTHANUM COMPOUNDS; OXYGEN VACANCIES;

CHARGING STATES; POOLE-FRENKEL TUNNELING; RARE EARTH OXIDE; TRAPPING CHARACTERISTICS;

DIELECTRIC FILMS;

EID: 33947617880     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.032     Document Type: Article

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