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Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

XPS study of the bonding properties of lanthanum oxide/silicon interface with a trace amount of nitrogen incorporation

(5) Wong, H a Iwai, H b Kakushima, K b Yang, B L a Chu, P K a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING PROPERTY; BULK PROPERTIES; CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL BONDING STRUCTURES; INTERFACE TRAP DENSITY; LANTHANUM OXIDE; MATERIAL PROPERTY; NITROGEN ATOM; NITROGEN INCORPORATION; NITROGEN-DOPING; TRACE AMOUNTS; XPS;

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC PROPERTIES; LANTHANUM ALLOYS; LANTHANUM OXIDES; NITROGEN; OXYGEN; OXYGEN VACANCIES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

LANTHANUM;

EID: 73849093230 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3268128 Document Type: Article

Times cited : (50)

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