SrO capping effect for La2O3/Ce-silicate gate dielectrics

Microelectronics Reliability

Volumn 50, Issue 3, 2010, Pages 356-359

  Kakushima, K ^a   Okamoto, K ^a   Koyanagi, T ^a   Kouda, M ^a   Tachi, K ^a   Kawanago, T ^a   Song, J ^a   Ahmet, P ^a   Nohira, H ^b   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; CAPPING TECHNIQUE; CHEMICAL BONDING STATE; EFFECTIVE ELECTRON MOBILITY; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; GENERAL TRENDS; PROCESS OPTIMIZATION; SILICATE LAYERS; TRANSISTOR OPERATION;

ATOMIC SPECTROSCOPY; CERIUM; CERIUM COMPOUNDS; CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); OPTIMIZATION; PHOTODEGRADATION; SILICATES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 76849101390     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.12.004     Document Type: Article

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