Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Microelectronics Reliability

Volumn 51, Issue 4, 2011, Pages 746-750

  Zade, D ^a   Sato, S ^a   Kakushima, K ^a   Srivastava, A ^b   Ahmet, P ^a   Tsutsui, K ^a   Nishiyama, A ^a   Sugii, N ^a   Natori, K ^a   Hattori, T ^a   Sarkar, C K ^c   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE   (India)

^c JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; EFFECTIVE MOBILITIES; INTERFACE STATE DENSITY; LOW-FREQUENCY NOISE; NMOSFETS; TRAP DISTRIBUTIONS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); SILICON COMPOUNDS; SPATIAL DISTRIBUTION; THERMAL NOISE;

HAFNIUM COMPOUNDS;

EID: 79952193439     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.11.004     Document Type: Article

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