Strategy for focused ion beam compound material removal for circuit editing

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 1, 2012, Pages

  Drezner, Yariv ^a   Greenzweig, Yuval ^a   Raveh, Amir ^a  

^a INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS;

ACCELERATION VOLTAGES; COMPOUND MATERIAL; ETCH RATES; ION ACCELERATIONS; MATERIAL REMOVAL; MATERIAL REMOVAL PROCESS; MICROELECTRONIC INDUSTRY; NANOMACHINING; PROCESS DEVELOPMENT; TEST CASE;

FOCUSED ION BEAMS;

EID: 84856618094     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3674280     Document Type: Article

References (40)

1. N. Yao, Focused ion Beam Systems- Basics and Applications (Cambridge University, Cambridge, England, 2007), p. 268.
2. J. Orloff, M. Utlaut, and L. Swanson, High Resolution Focused Ion Beam (Kluwer Academic, New York, 2003), p. 136.
3. A. A. Tseng, Small 1, 924 (2005). 10.1002/smll.v1:10
4. S. Reyntjens and R. Puers, J. Micromech. Microeng. 11, 287 (2001). 10.1088/0960-1317/11/4/301 (Pubitemid 32660122)
5. S. Haehn and T. S. Kalkur, J. Electron. Test. 11, 273 (1997). 10.1023/A:1008222607359
6. D. M. Donnet and H. Roberts, Microscopy of Semiconducting Materials (Springer-Verlag, Berlin, 2005), pp. 403-408.
7. R. Young and M. V. Moore, Introduction to Focused Ion Beams (Springer, New York, 2005), pp. 247-268.
8. L. Giannuzzi, J. L. Brown, S. R. Brown, R. B. Irvin, and F. A. Stevie, Microsc. Res. Tech. 41, 285 (1998). 10.1002/(SICI)1097-0029(19980515)41: 4<>1.0.CO;2-M
9. L. Giannuzzi, B. W. Kempshall, S. M. Schwartz, J. K. Lomness, B. I. Prenitzer, and F. A. Stevie, Introduction to Focused Ion Beams (Springer, New York, 2005), pp. 201-228.
10. T. Kamino, T. Yaguchi, T. Hashimoto, T. Ohnishi, and K. Umemura, Introduction to Focused Ion Beams (Springer, New York, 2005), pp. 229-245.
11. J. Melngailis, J. Vac. Sci. Technol. B 5, 469 (1987). 10.1116/1.583937
12. K. N. Hooghan, Introduction to Focused Ion Beams Insturmentation, Theory, Techniques and Practice, edited by, L. A. Giannuzzi, and, F. A. Stevie, (Springer, New York, 2005), pp. 87-106.
13. Y. Fu, Ion Beam in Nanoscience and Technology, edited by, R. Hellborg, H. J. Whitlow, and, Y. Zhang, (Springer, Berlin, 2009), pp. 293-296.
14. D. Josephson and B. Gottlieb, Advances in Electronic Testing: Challenges and Methodologies (Springer, New York, 2006), pp. 77-108.
15. C. Rue, S. Herschbein, and C. Scrudato, Proc. ISTFA 34, 141 (2008). 10.1361/cp2008istfa141
16. S. K. Islam and M. R. Haider, Sensors and Low Power Signal Processing (Springer, New York, 2010), pp. 19-30.
17. J. Chen, D. Yang, and D. Que, Front. Mater. Sci. China, 2, 335 (2008). 10.1007/s11706-008-0062-0
18. R. L. Rhoades, Future Fab Int. 24, 77 (2008).
19. T. Osaka and M. Yoshino, Electrochemical Nanotechnologies (Springer, New York, 2010), pp. 255-274.
20. B. Li, T. D. Sullivan, T. C. Lee, and D. Badami, Microelectron. Reliab. 44, 365 (2004). 10.1016/j.microrel.2003.11.004
21. P. J. Ireland, Thin Solid Films 304, 1 (1997). 10.1016/S0040-6090(96) 09557-0
22. A. Grill and V. Patel, Appl. Phys. Lett. 79, 803 (2001). 10.1063/1.1392976
23. E. Andideh, M. Lerner, G. Palmrose, S. El-Mansy, T. Scherban, G. Xu, and J. Blaine, J. Vac. Sci. Technol. B 22, 196 (2004). 10.1116/1.1640401
24. R. H. Livengood, P. Winer, and V. R. Rao, J. Vac. Sci. Technol. B 17, 40 (1999). 10.1116/1.590514
25. M. Paniccia, T. Eiles, R. Livengood, V. R. M. Rao, P. Winer, W. M. Yee, Microelectron. Eng. 46, 27 (1999). 10.1016/S0167-9317(99)00009-X
26. J. D. Casey, M. Phaneuf, C. Chandler, M. Megorden, K. E. Noll, R. Schuman, T. J. Gannon, A. Krechmer, D. Monforte, N. Antoniou, N. Bassom, J. Li, P. Carleson, and C. Huynh, J. Vac. Sci. Technol. B 20, 2682 (2002). 10.1116/1.1521736
27. C. Rue, R. Shapherd, R. Hallstein, and R. Livengood, Proc. ISTFA 33, 312 (2007).
28. K. Sugano and O. Tabata, J. Micromech. Microeng. 12, 911 (2002). 10.1088/0960-1317/12/6/323 (Pubitemid 35359552)
29. H. F. Winters, J. Vac. Sci. Technol. B 1, 927 (1983). 10.1116/1.582713 (Pubitemid 14492455)
30. S. B. Herschbein, L. S. Fischer, T. L. Kane, M. P. Tenney, and A. D. Shore, Proc. ISTFA 24, 127 (1998). 10.1361/cp1998istfa127
31. R. A. Lee, P. Wolpert, and A. Pednekar, Proc. ISTFA 27, 285 (2001). 10.1361/cp2000istfa285
32. K. Gamo and S. Namba, J. Vac. Sci. Technol. B 8, 1927 (1990). 10.1116/1.584876
33. L. Frey, C. Lehrer, and H. Ryssel, Appl. Phys. A 76, 1017 (2003). 10.1007/s00339-002-1943-1
34. T. Lundquist and M. Thompson, Microelectronics Failure Analysis, Desk Reference 5th Edition (ASM International, Materials Park, OH, 2004), p. 58.
35. F. Mosselveld, V. V. Makarov, T. R. Lundquist, D. P. Griffis, and P. E. Russel, J. Microsc. 214, 246 (2004). 10.1111/j.0022-2720.2004.01337.x (Pubitemid 38746178)
36. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods Phys. Res. B 174, 257 (1980). 10.1016/0029-554X(80)90440-1
37. J. R. Phillips, D. P. Griffis, and P. E. Russell, J. Vac. Sci. Technol. A 18, 1061 (2000). 10.1116/1.582300
38. L. R. Harriott, Jpn. J. Appl. Phys. 33, 7094 (1994). 10.1143/JJAP.33.7094
39. H. B. Kim, G. Hobler, A. Lugstein, and E. Bertagnolli, J. Micromech. Microeng. 17, 1178 (2007). 10.1088/0960-1317/17/6/011 (Pubitemid 46838933)
40. T. L. Matteson, S. W. Schwartz, E. C. Houge, B. W. Kempshall, and L. A. Giannuzzi, J. Electron. Mater. 31, 33 (2002). 10.1007/s11664-002-0169-5