The Challenges of FIB Chip Repair and Debug Assistance in the 0.25μm Copper Interconnect Millennium

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1998, Pages 127-130

  Herschbein, S B ^a   Fischer, L S ^a   Kane, T L ^a   Tenney, M P ^a   Shore, A D ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS ASSISTED ETCHING (GAE); INTERCONNECT STACKS;

COPPER; DATA ACQUISITION; DATA REDUCTION; ETCHING; INTERCONNECTION NETWORKS; ION BEAMS; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION; SURFACE PROPERTIES;

FAILURE ANALYSIS;

EID: 1542360796     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Sekine, "Etching Technology", ULSI Process Data Handbook (ed. Y. Akasaka, et al.) Science Forum, Tokyo 1990, page 188
2. J. Pelletier, Y. Arnal, M. Pons and A. Inard, "S2Br2, S2Cl2, S2F2: A New Line of Halogen-Containing Gases for Low Pressure Plasma Etch Processes", Japanese Journal of Applied Physics, Vol 29, No 9, Sept 1990
3. Proceedings: International Electron Devices Meeting (IEDM), Washington DC, 1997
4. M. Abramo, L. Hahn, and L. Moszkowicz, "Gas Assisted Etching: An Advanced Technique for FIB Device Modification", 1995 ISTFA Proceedings, page 439