Drain voltage dependent analytical model of tunnel field-effect transistors

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Verhulst, Anne S ^a   Leonelli, Daniele ^a,b   Rooyackers, Rita ^a   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; BANDGAP MATERIALS; CIRCUIT DESIGNS; DEVICE SIMULATIONS; DRAIN VOLTAGE; EXPERIMENTAL DATA; METAL OXIDE SEMICONDUCTOR; OUTPUT CHARACTERISTICS; SOURCE DOPING; SUPERLINEAR;

COMPUTER SIMULATION; MATHEMATICAL MODELS; MODELS; SEMICONDUCTOR DOPING; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79961112782     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3609064     Document Type: Article

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