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Volumn 107, Issue 5, 2010, Pages
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Zener tunneling in semiconductors under nonuniform electric fields
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Author keywords
[No Author keywords available]
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Indexed keywords
ABRUPT P-N JUNCTION;
HIGH ELECTRIC FIELDS;
I - V CURVE;
NANOMETER DIMENSIONS;
NONUNIFORM ELECTRIC FIELD;
SEMICONDUCTOR DEVICE PERFORMANCE;
TUNNEL PROBABILITY;
TWO-BAND MODEL;
UNIFORM FIELDS;
WKB APPROXIMATIONS;
ZENER TUNNELING;
APPROXIMATION THEORY;
ELECTRIC FIELD MEASUREMENT;
ELECTRIC FIELDS;
ENGINEERING EXHIBITIONS;
PROBABILITY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR JUNCTIONS;
TUNNELING (EXCAVATION);
WIND TUNNELS;
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EID: 77949704912
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3311550 Document Type: Article |
Times cited : (32)
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References (19)
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