Comparative study of Si, Ge and inas based steep subthreshold slope tunnel transistors for 0.25v supply voltage logic applications

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 47-48

  Mookerjea, Saurabh ^a   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64949169175     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800730     Document Type: Conference Paper

References (4)

1. Th. Nirschl et.al., IEDM 2004, pp. 195-198
2. Sentauras, Ver. Z-2007.3
3. T. Krishnamohan et.al., IEEE Transactions Electron Devices, 53, 2006 pp. 990.
4. R. Chau, S. Datta et al., IEEE Transactions on Nanotechnology, 4, no.2, 2005 pp. 153