Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 271-274

  Vandenberghe, William G ^a,b   Sorée, Bart ^a,c   Magnus, Wim ^a,c   Groeseneken, Guido ^a,b   Verhulst, Anne S ^a   Fischetti, Massimo V ^d  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

^d The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CONFINEMENT EFFECTS; ENERGY QUANTIZATION; FIELD INDUCED; INDIRECT SEMICONDUCTOR; QUANTUM MECHANICAL; QUANTUM MECHANICAL MODEL; SEMICLASSICAL APPROACHES; SEMICLASSICAL MODEL; TUNNEL CURRENTS;

COMPUTER SIMULATION; FIELD EFFECT SEMICONDUCTOR DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); QUANTUM CONFINEMENT;

SEMICONDUCTOR DEVICE MODELS;

EID: 80055008117     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035077     Document Type: Conference Paper

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