Tunnel field effect transistor with raised germanium source

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1107-1109

  Kim, Sung Hwan ^a   Agarwal, Sapan ^a   Jacobson, Zachery A ^a   Matheu, Peter ^a   Hu, Chenming ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Band to band tunneling (BTBT); germanium (Ge) source; raised source; tunnel field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; DEVICE SIMULATIONS; DRIVE CURRENTS; ENERGY-DELAY PERFORMANCE; EXPERIMENTAL DATA; FREQUENCY RANGES; LOW VOLTAGE OPERATION; LOWER ENERGIES; MIXED MODE; MOS-FET; RAISED SOURCE; SOURCE REGION; SUBTHRESHOLD SWING; TUNNEL FIELD EFFECT TRANSISTOR; TUNNEL FIELD EFFECT TRANSISTOR (TFET); TUNNELING MODELS;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS;

GERMANIUM;

EID: 77957555830     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061214     Document Type: Article

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