Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (10 -10) and semipolar (1 1-2 2) orientations

Journal of Physics D: Applied Physics

Volumn 42, Issue 13, 2009, Pages

  Masui, Hisashi ^a   Asamizu, Hirokuni ^a,b   Melo, Thiago ^a   Yamada, Hisashi ^a,c   Iso, Kenji ^a,d   Cruz, Samantha C ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

^b ROHM CO LTD   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

^d Japan Pionics Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION TECHNIQUES; ELECTRICAL CHARACTERISTIC; GAN SUBSTRATE; IN-FIELD; INGAN/GAN; NEGATIVE VOLTAGE; NON-POLAR; OPTOELECTRONIC PROPERTIES; PIEZO-ELECTRIC FIELDS; POSITIVE VOLTAGE; QUANTUM WELL; SEMIPOLAR; SPECTRAL DIFFERENCES;

CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; PHOTOLUMINESCENCE; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SULFUR COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 70049085017     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/13/135106     Document Type: Article

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