GaN-based ultraviolet light-emitting diodes with multifinger contacts

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 11, 2010, Pages 2585-2588

  Rodríguez, Hernán ^a   Lobo, Neysha ^b   Einfeldt, Sven ^a   Knauer, Arne ^a   Weyers, Markus ^a   Kneissl, Michael ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

current crowding; device design; GaN; light emitting diodes; semiconductors

Indexed keywords

A-THERMAL; CONTACT AREAS; CONTACT EDGES; CURRENT CROWDING; CURRENT DISTRIBUTION; DEVICE DESIGN; EXPERIMENTAL DATA; EXTERNAL QUANTUM EFFICIENCY; GAN; MULTIFINGERS; OUTPUT POWER; PULSED OPERATION; SEMICONDUCTORS; SERIES RESISTANCES; ULTRAVIOLET LIGHT-EMITTING DIODES;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR DIODES; ULTRAVIOLET RADIATION;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 78349263094     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026193     Document Type: Article

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