Effect of annealing treatments on photoluminescence and charge storage mechanism in Silicon-Rich SiNx: H films

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Sahu, Bhabani Shankar ^a   Delachat, Florian ^a   Slaoui, Abdelilah ^a   Carrada, Marzia ^a   Ferblantier, Gerald ^a   Muller, Dominique ^a  

^a Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CAPACITANCE; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; PHOTOLUMINESCENCE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; SILICON OXIDES; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; PLASMA DEPOSITION; SILICON NITRIDE;

ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE; EFFECT OF ANNEALING; ELECTRON CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; LOW OPERATING VOLTAGE; TEMPERATURE RANGE; VISIBLE PHOTOLUMINESCENCE; VOLTAGE ANALYSIS; AMORPHOUS SI; ANALYSIS TECHNIQUES; ANNEALING TREATMENTS; AVERAGE SIZE; CHARGE STORAGE; LOW-POWER MEMORY; MEMORY WINDOW; ROOM TEMPERATURE;

AMORPHOUS SILICON;

EID: 84255184264     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-178     Document Type: Article

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