Electron trap characteristics of silicon rich silicon nitride thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3206-3210

  Mine, Toshiyuki ^a   Fujisari, Koji ^a   Ishida, Takeshi ^a   Shimamoto, Yasuhiro ^a   Yamada, Renichi ^a   Torii, Kazuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Charge localization; Charge re distribution; MONOS; Silicon rich silicon nitride

Indexed keywords

ELECTRIC CHARGE; ELECTRON MOBILITY; ELECTRON TRAPS; GATE DIELECTRICS; INTERFACES (MATERIALS); SILICON NITRIDE;

CHARGE LOCALIZATION; CHARGE REDISTRIBUTION; RETENTION LOSS; SILICON-RICH SILICON NITRIDES;

THIN FILMS;

EID: 34547901472     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3206     Document Type: Article

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