Luminescence tuning of amorphous Si quantum dots prepared by plasma-enhanced chemical vapor deposition

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 5, 2008, Pages 2540-2543

  Kang, S M ^a   Yoon, S G ^a   Kim, S W ^b   Yoon, D H ^a,c  

^a Sungkyunkwan University   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Confinement; Luminescence; Si nanocrystals

Indexed keywords

DANGLING BONDS; FLOW OF GASES; FLOW RATE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH RATE; LUMINESCENCE; NANOCRYSTALS; NITROGEN; NITROGEN PLASMA; PLASMA CONFINEMENT; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE;

AMORPHOUS STRUCTURES; FOURIER TRANSFORM INFRARED; HYDROGEN PARTIAL PRESSURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); QUANTUM CONFINEMENT EFFECTS; RAMAN SPECTROSCOPY MEASUREMENTS; SI NANOCRYSTAL; SILICON NITRIDE FILM;

AMORPHOUS SILICON;

EID: 45849150786     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (26)

1. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 83, 909 (1997).
2. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Frans, and F. Propio, Nature 408, 400 (2000).
3. K. S. Min, K. V. Shcheglov, C. M. Yang, Harry A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996).
4. T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello, Phys. Rev. Lett. 80, 3803 (1998).
5. S. Fujita and N. Sugiyama, Appl. Phys. Lett. 74, 308 (1999).
6. A. Puzder, A. J. Williamson, J. C. Crossman, and G. Galli, Phys. Rev. Lett. 88, 097401 (2002).
7. F. M. Kolb, A. Berger, H. Hofmeister, E. Pippel, U. Gösele, and M. Zacharias, Appl. Phys. Lett. 89, 173111 (2006).
8. L. T. Canham, Phys. Status Solidi (B) 190, 9 (1995).
9. L. S. Liao, X. M. Bao, N. S. Li, X. Q. Zheng, and N. B. Min, J. Lumin. 68, 199 (1996).
10. E. Edelberg, S. Bergh, R. Naone, M. Hall, and E. S. Aydil, J. Appl. Phys. 81, 2410 (1997).
11. M. Wang, X. Huang, J. Xu, W. Li, Z. Liu, and K. Chen, Appl Phys. Lett. 72, 722 (1998).
12. S. A. Ding, M. Ikeda, M. Fukuda, S. Miyazaki, and M. Hirose, Appl. Phys. Lett. 73, 3881 (1998).
13. T. Baron, F. Martin, P. Mur, C. Wyon, and M. Dupuy, J. Cryst. Growth 209, 1004 (2000).
14. A. V. Hernandez, T. V. Torchynska, Y. Matsumoto, S. J. Sandoval, M. Dybiec, S. Ostapenko, and L. V. Shcherbina, Microelectron. J. 36, 510 (2005).
15. R. A. Street, Adv. Phys. 30, 593 (1981).
16. N.-M. Park, T.-S. Kim, and S.-J. Park, Appl. Phys. Lett. 78, 2575 (2001).
17. Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, Appl. Phys. Lett. 83, 3474 (2003).
18. J.-F. Lelievre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouaydi, Daniel Ara-jo, Thierry Epicier, R. Monna, M. Pirot, P.-J. Ribeyron, and C. Jaussaud, Thin Solid Films 103-107, 511 (2006).
19. S. G. Yoon, W. J. Park, H. Kim, S. W. Kim, and D. H. Yoon, J. Electroceram. 16, 469 (2006).
20. E. Bustarret, M. Bensouda, M. C. Habrard, and J. C. Bruyere, Phys. Rev. B 38, 8171 (1988).
21. J. Robertson, Philos. Mag. B 44, 215 (1981).
22. T. Yasuda, D. S. Hwang, J. W Park, K. Ikuta, S. Yamasaki, and K. Tanaka, Appl. Phys. Lett. 72, 653 (1999).
23. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, and S. A. Kochubei, Appl. Phys. Lett. 73, 1212 (1998).
24. G. Yu, G. Chen, and F. Zhang, Phys. Status Solidi B 152, 73 (1989).
25. N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, Phys. Rev. Lett. 86, 1355 (2001).
26. D. J. Lockwood, Solid State Commun. 92, 101 (1994).