PECVD in-situ growth of silicon quantum dots in silicon nitride from silane and nitrogen

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 77-79

  Mercaldo, Lucia V ^a   Veneri, Paola Delli ^a   Esposito, Emilia ^a   Massera, Ettore ^a   Usatii, Iurie ^a   Privato, Carlo ^a  

^a ENEA CR Portici   (Italy)

Author keywords

Silicon nitride; Silicon quantum dots; Third generation photovoltaics

Indexed keywords

NANOCRYSTALS; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS;

FABRICATION TECHNIQUE; HIGHEST TEMPERATURE; IN-SITU GROWTH; PHOTOVOLTAICS; POST DEPOSITION ANNEALING; SILICON NANO STRUCTURE (SINS); SILICON NITRIDE FILM; SILICON QUANTUM DOTS; SPONTANEOUS GROWTH; THIRD GENERATION PHOTOVOLTAICS;

SILICON NITRIDE;

EID: 65549124713     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.029     Document Type: Article

References (12)

1. Pavesi L., et al. Nature 408 (2000) 440 references therein
2. Jiang C.-W., and Green M.A. J. Appl. Phys. 99 (2006) 114902
3. Conibeer G., et al. Thin Solid Films 511-512 (2006) 654
4. Svrcek V., et al. Thin Solid Films 451-452 (2004) 384
5. Lelievre J.-F., et al. Proc. 21st European PV Solar Energy Conf. Dresden (2006) 1456
6. Park N.-M., et al. Phys. Rev. Lett. 86 7 (2001) 1355
7. Kim T.-W., et al. Appl. Phys. Lett. 88 (2006) 123102
8. Dehan E., et al. Thin Solid Films 266 (1995) 14
9. Palik E.D. Handbook of Optical Constants of Solids, vol. 1 (1985)
10. Deshpande S.V. J. Appl. Phys. 77 (1995) 6534
11. Park N.-M., et al. Chem. Vap. Depo. 8 6 (2002) 254
12. Yin Z., and Smith F.W. Phys. Rev. B 42 (1990) 3658