Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 1, 2009, Pages 145-156

  Xu, Q ^a   Ra, Y ^b   Bachman, M ^c   Li, G P ^c  

^a MOREHEAD STATE UNIVERSITY   (United States)

^b BMR Technology Corp   (United States)

^c University of California at Irvine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; AVALANCHES (SNOWSLIDES); CHEMICAL PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; FOURIER TRANSFORMS; HYDROGEN; HYDROGEN BONDS; INDUCTIVELY COUPLED PLASMA; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL INSULATOR BOUNDARIES; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; MICROWAVES; MIS DEVICES; NITRIDES; NONMETALS; PHOTORESISTS; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING SILICON; SILICON NITRIDE; SNOW; SURFACE ROUGHNESS; VAPOR DEPOSITION; VAPORS;

ATOMIC BONDS; ATOMIC FORCES; AVALANCHE BREAKDOWNS; BREAKDOWN STRENGTHS; DEPOSITED SILICON NITRIDE FILMS; ELECTRICAL PROPERTIES; FILM DEPOSITIONS; FIXED CHARGES; FOURIER TRANSFORM INFRARED; HIGH DENSITIES; HIGH MICROWAVES; HIGHER TEMPERATURES; HOLE DENSITIES; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITIONS; INTERFACE CHARGES; MICROWAVE POWERS; PIN HOLES; SEMI-CONDUCTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149494589     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3054133     Document Type: Article

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