FTIR characterization of light emitting Si-rich nitride films prepared by low pressure chemical vapor deposition

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9359-9364

  Vamvakas, V Em ^a   Gardelis, S ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

FTIR spectroscopy; Photoluminescence; Silicon nanoparticles; Silicon nitride

Indexed keywords

DICHLOROSILANE; SILICON NANOPARTICLES;

ABSORPTION SPECTRA; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; LIGHT EMISSION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; PHOTOLUMINESCENCE;

SILICON NITRIDE;

ABSORPTION SPECTRA; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; LIGHT EMISSION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICON NITRIDE;

EID: 34547737419     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.069     Document Type: Article

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