Electronic structure of memory traps in silicon nitride

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1866-1869

  Gritsenko, V A ^a   Nekrashevich, S S ^a   Vasilev, V V ^a   Shaposhnikov, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Defects; Silicon nitride; Traps

Indexed keywords

HOLE TRANSPORTS; MEMORY TRAPS; QUANTUM-CHEMICAL SIMULATIONS; SI-SI BONDS; THERMAL IONIZATION; TRAPS;

ELECTRONIC STRUCTURE; SILICON; SILICON NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349198454     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.093     Document Type: Article

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