Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4607-4610

  Prakash, G Vijaya ^a   Cazzanelli, M ^a   Gaburro, Z ^a   Pavesi, L ^a   Iacona, F ^b   Franzo G ^c   Priolo, F ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b CNR IMETEM   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE VALUES; FEMTOSECONDS; HIGH-TEMPERATURE ANNEALING; IMAGINARY PARTS; INTENSITY-DEPENDENT; NANOCRYSTALLINE SIZE; NON-LINEAR OPTICAL PROPERTIES; NON-LINEARITY; NONLINEAR ABSORPTIONS; PEAK INTENSITY; QUANTUM CONFINEMENT EFFECTS; REAL PART; SILICON NANOCRYSTALS; THIRD-ORDER NONLINEAR SUSCEPTIBILITY; TI-SAPPHIRE; TWO-PHOTON ABSORPTIONS; Z-SCAN TECHNIQUE;

CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE SILICON; NONLINEAR OPTICS; SILICON OXIDES; TWO PHOTON PROCESSES; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 84861442272     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456241     Document Type: Article

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