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Volumn 15, Issue 2, 2012, Pages

Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; HIGHLY INTEGRATED; INGAN/GAN; LED ARRAYS; LOCAL STRAINS; MICRO-PYRAMID ARRAYS; OPTICAL POLARIZATION SWITCHING; POTENTIAL FLUCTUATIONS; SELECTIVE AREA GROWTH; SEMIPOLAR;

EID: 84055176840     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.018202esl     Document Type: Article
Times cited : (19)

References (32)
  • 4
    • 0032089895 scopus 로고    scopus 로고
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    • S. Porowski, J. Cryst. Growth, 189/190, 153 (1998). 10.1016/S0022- 0248(98)00193-6
    • (1998) J. Cryst. Growth , vol.189-190 , pp. 153
    • Porowski, S.1
  • 24
    • 0001241840 scopus 로고    scopus 로고
    • Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
    • DOI 10.1063/1.125532, PII S0003695199005525
    • X. Li, P. W. Bohn, and J. J. Coleman, Appl. Phys. Lett., 75, 4049 (1999). 10.1063/1.125532 (Pubitemid 129709752)
    • (1999) Applied Physics Letters , vol.75 , Issue.26 , pp. 4049-4051
    • Li, X.1    Bohn, P.W.2    Coleman, J.J.3
  • 31
    • 17944366599 scopus 로고    scopus 로고
    • Anisotropic Mg incorporation in GaN growth on nonplanar templates
    • DOI 10.1063/1.1870121, 121901
    • D. Ren and P. D. Dapkus, Appl. Phys. Lett., 86, 121901 (2005). 10.1063/1.1870121 (Pubitemid 40596886)
    • (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
    • Ren, D.1    Dapkus, P.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.