Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth

Applied Physics Letters

Volumn 75, Issue 26, 1999, Pages 4049-4051

  Li, X ^a   Bohn, P W ^a   Coleman, J J ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001241840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125532     Document Type: Article

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