Local strain distribution of hexagonal GaN pyramids

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 630-633

  Hoffmann, A ^a   Siegle, H ^a   Kaschner, A ^a   Eckey, L ^a   Thomsen, C ^a   Christen, J ^b   Bertram, F ^b   Schmidt, M ^b   Hiramatsu, K ^c   Kitamura, S ^c   Sawaki, N ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; GaN; Raman spectroscopy; Selective MOVPE

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; ENERGY GAP; RAMAN SPECTROSCOPY; STRAIN; THERMAL EXPANSION;

GALLIUM NITRIDE; MICRO RAMAN SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032093714     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00225-5     Document Type: Article

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