-
1
-
-
0042099114
-
-
Cambridge University Press, Cambridge, U.K
-
E. F. Schubert, Light-Emitting Diodes, Cambridge University Press, Cambridge, U.K. (2003).
-
(2003)
Light-Emitting Diodes
-
-
Schubert, E.F.1
-
2
-
-
0033877619
-
-
0021-4922, 10.1143/JJAP.39.413
-
T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 0021-4922, 39, 413 (2000). 10.1143/JJAP.39.413
-
(2000)
Jpn. J. Appl. Phys., Part 1
, vol.39
, pp. 413
-
-
Takeuchi, T.1
Amano, H.2
Akasaki, I.3
-
3
-
-
0642275027
-
-
0163-1829, 10.1103/PhysRevB.56.R10024
-
F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 0163-1829, 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
-
(1997)
Phys. Rev. B
, vol.56
, pp. 10024
-
-
Bernardini, F.1
Fiorentini, V.2
Vanderbilt, D.3
-
4
-
-
0001598226
-
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
-
DOI 10.1063/1.122247, PII S0003695198023389
-
T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 0003-6951, 73, 1691 (1998). 10.1063/1.122247 (Pubitemid 128671954)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.12
, pp. 1691-1693
-
-
Takeuchi, T.1
Wetzel, C.2
Yamaguchi, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
Kaneko, Y.7
Nakagawa, S.8
Yamaoka, Y.9
Yamada, N.10
-
5
-
-
0034710677
-
Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
-
DOI 10.1038/35022529
-
P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 0028-0836, 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
-
(2000)
Nature
, vol.406
, Issue.6798
, pp. 865-868
-
-
Waltereit, P.1
Brandt, O.2
Trampert, A.3
Grahn, H.T.4
Monniger, J.5
Ramsteiner, M.6
Relche, M.7
Ploog, K.H.8
-
6
-
-
17944381225
-
Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
-
DOI 10.1063/1.1875765, 111101
-
N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett. 0003-6951, 86, 111101 (2005). 10.1063/1.1875765 (Pubitemid 40596970)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.11
, pp. 1-3
-
-
Gardner, N.F.1
Kim, J.C.2
Wierer, J.J.3
Shen, Y.C.4
Krames, M.R.5
-
7
-
-
11044234356
-
Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
-
DOI 10.1063/1.1825612, 3
-
A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Appl. Phys. Lett. 0003-6951, 85, 5143 (2004). 10.1063/1.1825612 (Pubitemid 40043510)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.22
, pp. 5143-5145
-
-
Chakraborty, A.1
Haskell, B.A.2
Keller, S.3
Speck, J.S.4
Denbaars, S.P.5
Nakamura, S.6
Mishra, U.K.7
-
8
-
-
2542504545
-
-
0003-6951, 10.1063/1.1738938
-
A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett. 0003-6951, 84, 3663 (2004). 10.1063/1.1738938
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 3663
-
-
Chitnis, A.1
Chen, C.2
Adivarahan, V.3
Shatalov, M.4
Kuokstis, E.5
Mandavilli, V.6
Yang, J.7
Khan, M.A.8
-
9
-
-
30344449764
-
Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates
-
DOI 10.1143/JJAP.44.L945
-
A. Chakraborty, T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Jpn. J. Appl. Phys., Part 2 0021-4922, 44, L945 (2005). 10.1143/JJAP.44.L945 (Pubitemid 43065120)
-
(2005)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.44
, Issue.28-32
-
-
Chakraborty, A.1
Baker, T.J.2
Haskell, B.A.3
Wu, F.4
Speck, J.S.5
Denbaars, S.P.6
Nakamura, S.7
Mishra, U.K.8
-
10
-
-
28444469757
-
-
0003-6951, 10.1063/1.2139841
-
R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 0003-6951, 87, 231110 (2005). 10.1063/1.2139841
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 231110
-
-
Sharma, R.1
Pattison, P.M.2
Masui, H.3
Farrell, R.M.4
Baker, T.J.5
Haskell, B.A.6
Wu, F.7
Denbaars, S.P.8
Speck, J.S.9
Nakamura, S.10
-
11
-
-
32044473082
-
Characterization of planar semipolar gallium nitride films on sapphire substrates
-
DOI 10.1143/JJAP.45.L154
-
T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 0021-4922, 45, L154 (2006). 10.1143/JJAP.45.L154 (Pubitemid 43200832)
-
(2006)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.45
, Issue.4-7
-
-
Baker, T.J.1
Haskell, B.A.2
Wu, F.3
Speck, J.S.4
Nakamura, S.5
-
12
-
-
38749097351
-
High power and high efficiency green light emitting diode on free-standing semipolar (112;2) bulk GaN substrate
-
DOI 10.1002/pssr.200701098
-
H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Phys. Status Solidi (RRL) 1862-6254, 1, 162 (2007). 10.1002/pssr.200701098 (Pubitemid 351175946)
-
(2007)
Physica Status Solidi - Rapid Research Letetrs
, vol.1
, Issue.4
, pp. 162-164
-
-
Sato, H.1
Tyagi, A.2
Zhong, H.3
Fellows, N.4
Chung, R.B.5
Saito, M.6
Fujito, K.7
Speck, J.S.8
DenBaars, S.P.9
Nakamura, S.10
-
13
-
-
33746621744
-
Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes
-
DOI 10.1063/1.2240307
-
T. Wunderer, P. Brückner, B. Neubert, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, and K. Thonke, Appl. Phys. Lett. 0003-6951, 89, 041121 (2006). 10.1063/1.2240307 (Pubitemid 44147526)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.4
, pp. 041121
-
-
Wunderer, T.1
Bruckner, P.2
Neubert, B.3
Scholz, F.4
Feneberg, M.5
Lipski, F.6
Schirra, M.7
Thonke, K.8
-
14
-
-
57049106883
-
-
1882-0778, 10.1143/APEX.1.011106
-
M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Express 1882-0778, 1, 011106 (2008). 10.1143/APEX.1.011106
-
(2008)
Appl. Phys. Express
, vol.1
, pp. 011106
-
-
Funato, M.1
Kondou, T.2
Hayashi, K.3
Nishiura, S.4
Ueda, M.5
Kawakami, Y.6
Narukawa, Y.7
Mukai, T.8
-
15
-
-
8644267611
-
-
0003-6951, 10.1063/1.1806266
-
K. Nishizuka, M. Funato, Y. Kawakami, S. Fujita, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 0003-6951, 85, 3122 (2004). 10.1063/1.1806266
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3122
-
-
Nishizuka, K.1
Funato, M.2
Kawakami, Y.3
Fujita, S.4
Narukawa, Y.5
Mukai, T.6
-
16
-
-
57849135516
-
-
0003-6951, 10.1063/1.3049607
-
C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and G. W. Kwon, Appl. Phys. Lett. 0003-6951, 93, 241109 (2008). 10.1063/1.3049607
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 241109
-
-
Cho, C.Y.1
Park, I.K.2
Kwon, M.K.3
Kim, J.Y.4
Park, S.J.5
Jung, D.R.6
Kwon, G.W.7
-
17
-
-
0000900177
-
Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
-
DOI 10.1063/1.122810, PII S0003695198034500
-
T. Wang, D. Nakagawa, J. Wang, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 0003-6951, 73, 3571 (1998). 10.1063/1.122810 (Pubitemid 128677468)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.24
, pp. 3571-3573
-
-
Wang, T.1
Nakagawa, D.2
Wang, J.3
Sugahara, T.4
Sakai, S.5
-
18
-
-
33745615181
-
Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
-
DOI 10.1063/1.2217259
-
M. Funato, T. Kotani, T. Kondou, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 0003-6951, 88, 261920 (2006). 10.1063/1.2217259 (Pubitemid 43992948)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.26
, pp. 261920
-
-
Funato, M.1
Kotani, T.2
Kondou, T.3
Kawakami, Y.4
Narukawa, Y.5
Mukai, T.6
-
19
-
-
28444438094
-
-
0003-6951, 10.1063/1.2136226
-
K. Nishizuka, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 0003-6951, 87, 231901 (2005). 10.1063/1.2136226
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 231901
-
-
Nishizuka, K.1
Funato, M.2
Kawakami, Y.3
Narukawa, Y.4
Mukai, T.5
-
20
-
-
33845463122
-
Epitaxial growth and optical properties of semipolar (112;2) GaN and InGaN/GaN quantum wells on GaN bulk substrates
-
DOI 10.1063/1.2397029
-
M. Ueda, K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 0003-6951, 89, 211907 (2006). 10.1063/1.2397029 (Pubitemid 44892275)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.21
, pp. 211907
-
-
Ueda, M.1
Kojima, K.2
Funato, M.3
Kawakami, Y.4
Narukawa, Y.5
Mukai, T.6
-
21
-
-
33746319405
-
Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates
-
DOI 10.1143/JJAP.45.L659
-
M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, Jpn. J. Appl. Phys., Part 2 0021-4922, 45, L659 (2006). 10.1143/JJAP.45.L659 (Pubitemid 44106937)
-
(2006)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.45
, Issue.24-28
-
-
Funato, M.1
Ueda, M.2
Kawakami, Y.3
Narukawa, Y.4
Kosugi, T.5
Takahashi, M.6
Mukai, T.7
-
22
-
-
17944366599
-
Anisotropic Mg incorporation in GaN growth on nonplanar templates
-
DOI 10.1063/1.1870121, 121901
-
D. Ren and P. D. Dapkus, Appl. Phys. Lett. 0003-6951, 86, 121901 (2005). 10.1063/1.1870121 (Pubitemid 40596886)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.12
, pp. 1-3
-
-
Ren, D.1
Dapkus, P.D.2
-
23
-
-
33646501923
-
-
1063-7826, 10.1134/S1063782606050162
-
A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, Semiconductors 1063-7826, 40, 605 (2006). 10.1134/S1063782606050162
-
(2006)
Semiconductors
, vol.40
, pp. 605
-
-
Efremov, A.A.1
Bochkareva, N.I.2
Gorbunov, R.I.3
Lavrinovich, D.A.4
Rebane, Yu.T.5
Tarkhin, D.V.6
Shreter, Yu.G.7
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