Fabrication and performance of parallel-addressed InGaN micro-LED arrays

IEEE Photonics Technology Letters

Volumn 15, Issue 4, 2003, Pages 510-512

  Choi, H W ^a   Jeon, C W ^a   Dawson, M D ^a   Edwards, P R ^a   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Gallium nitride; Light emitting diode (LED) arrays; Micro light emitting diodes

Indexed keywords

ARRAYS; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

INDIUM GALLIUM NITRIDE; MICRO LIGHT EMITTING DIODE ARRAYS;

LIGHT EMITTING DIODES;

EID: 0037389314     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.809257     Document Type: Article

References (12)

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