A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 79-82

  Jeon, C W ^a   Choi, H W ^a   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; DRY ETCHING; FABRICATION; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

ISOTROPIC DRY ETCHING; MICRO LIGHT EMITTING DIODES; SELF-ALIGNED ISOLATION TECHNIQUE;

LIGHT EMITTING DIODES;

EID: 0348146366     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303292     Document Type: Article

References (6)

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2. A. Bernard, B. Michel, and E. Delamarche, Anal. Chem. 73, 8 (2001).
3. C.-W. Jeon, K.-S. Kim, and M. D. Dawson, phys. stat. sol. (a) 192, 325 (2001).
4. I. Ozden, M. Diagne, A. V. Nurmikko, J. Han, and T. Takeuchi, phys. stat. sol. (a) 188, 139 (2001).
5. R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, and F. Ren, J. Vac. Sci. Technol. A 18, 1139 (2000).
6. H. W. Choi, C.-W Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, J. Appl. Phys. 93, 5978 (2003).