InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Optics Express

Volumn 18, Issue 104, 2010, Pages A562-A567

  Sheu, Jinn Kong ^a   Chang, Kuo Hua ^a   Tu, Shang Ju ^a   Lee, Ming Lun ^a,b   Yang, Chih Ciao ^a   Hsu, Che Kang ^a   Lai, Wei Chih ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MULTIPHOTON PROCESSES; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA ETCHING; SILICON COMPOUNDS;

ABSORPTION LOSS; ELECTRON CONCENTRATION; GAN BASED LED; GAN FILM; GAN TEMPLATE; GAN-BASED LIGHT-EMITTING DIODES; HEAVILY DOPED; INJECTION CURRENTS; LIGHT OUTPUT; MASK LAYER; N-TYPE OHMIC CONTACT; SAPPHIRE SUBSTRATES; SELECTIVE GROWTH; SELECTIVE REGROWTH; UNDERLYING LAYERS;

GALLIUM ALLOYS;

EID: 78149442913     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.00A562     Document Type: Article

References (13)

1. E. F. Schubert, Light-emitting diodes, pp.150-160 (Second Edition, Cambridge University Press, Cambridge, U.K., 2006.)
2. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN, ” Appl. Phys. Lett. 75(17), 2569 (1999).
3. C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, ““High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD, ” IEEE Photon. Technol. Lett. 18(11), 1213-1215 (2006) (and references therein).
4. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, and W. C. Lai, “In GaN light-emitting diodes with naturally formed truncated micropyramids on top surface, ” Appl. Phys. Lett. 88(11), 113-505 (2006).
5. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, “Nitride-based LEDs with textured side walls, ” IEEE Photon. Technol. Lett. 16(3), 750-752 (2004).
6. J.-S. Lee, J. Lee, S. Kim, and H. Jeon, “GaN-based light-emitting diode structure with monolithically integrated sidewall deflectors for enhanced surface emission, ” IEEE Photon. Technol. Lett. 18(15), 1588-1590 (2006).
7. C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, “Light-output Enhancement in a Nitride Based Light-emitting Diode with 22 Undercut Side Walls, ” IEEE Photon. Technol. Lett. 17(1), 19-21 (2005).
8. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0. 3Ga0. 7N/GaN short-period superlattice tunneling contact layer, ” IEEE Electron Device Lett. 22(10), 460-462 (2001).
9. H. G. Kim, T. V. Cuong, H. Jeong, S. H. Woo, O. H. Cha, E.-K. Suh, C.-H. Hong, H. K. Cho, B. H. Kong, and M. S. Jeong, “Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diode, ” Appl. Phys. Lett. 92(6), 61118 (2008).
10. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, “Selective growth of wurtzite GaN and AlxGa\-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy, ” J. Cryst. Growth 144(3-4), 133-140 (1994).
11. M. L. Lee, J. K. Sheu, and C. C. Hu, “Nonalloyed Cr/Au-based Ohmic contacts to n-GaN, ” Appl. Phys. Lett. 91(18), 182106 (2007).
12. C. F. Lin, H. C. Cheng, G. C. Chi, C. J. Bu, and M. S. Feng, “Improved contact performance of GaN film using Si diffusion, ” Appl. Phys. Lett. 76(14), 1878 (2000).
13. J. K. Sheu, and G. C. Chi, “The doping process and dopant characteristics of GaN, ” J. Phys. 14, R657 (2002).