GaN-based light-emitting diode structure with monolithically integrated sidewall deflectors for enhanced surface emission

IEEE Photonics Technology Letters

Volumn 18, Issue 15, 2006, Pages 1588-1590

  Lee, Jae Soong ^a   Lee, Joonhee ^a   Kim, Sunghwan ^a   Jeon, Heonsu ^a  

^a Seoul National University   (South Korea)

Author keywords

GaN; Integrated optics; Light deflectors; Light emitting diodes (LED); Surface emission; Total internal reflection (TIR)

Indexed keywords

COMPUTER SIMULATION; INTEGRATED OPTICS; LIGHT EMISSION; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM COMPOUNDS;

FAR-FIELD EMISSION PATTERNS; LIGHT DEFLECTORS; SURFACE EMISSION; TOTAL INTERNAL REFLECTION (TIR);

LIGHT EMITTING DIODES;

EID: 33745953344     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.879559     Document Type: Article

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